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Improved Performance of Lone-Wavelength U U Strained Bulk-like Semiconductor Lasers

    Abstract-We show that the incorporation of either tensile or
    compressive strain can have significant advantages for long
    wavelength bulk-like lasers, with greater advantage being
    achieved in tensile-strained structures. The application of biaxial
    tension to the active region of a bulk or quantum-well
    111-V semiconductor laser can significantly enhance TM gain
    compared to TE gain and reduce the threshold current density,
    due to improved suppression of spontaneous emission polarized
    in the growth plane of the laser structure. The differential gain
    is enhanced compared to unstrained structures and a larger
    peak gain can be achieved than in comparable structures under
    biaxial compression. We calculate the effect of the spin-orbit
    interaction on the polarized gain and character of the valence
    states as a function of built-in strain. We include the spin-splitoff
    band in our calculations and show that the strain-induced
    interaction with this band has a significant influence on laser
    characteristics, particularly in tensile-strained structures,
    where it further enhances the TM gain over the TE gain. Finally,
    we investigate the effect of biaxial strain on the major
    intrinsic loss mechanism of Auger recombination in long wavelength
    1.55 pm lasers. We observe a rapid increase in the Auger
    threshold activation energies, leading to a reduction in the Auger
    rates, for moderate tensile and compressive strain, compared
    to an unstrained structure.


    این مطلب تا کنون 73 بار بازدید شده است.
    ارسال شده در تاریخ پنجشنبه 11 دي 1348 [ گزارش پست ]
    منبع
    برچسب ها : gain ,strain ,tensile ,structures ,lasers ,bulk ,strained structures ,tensile strained ,bulk like ,show that ,tensile strained structures ,
    Improved Performance of Lone-Wavelength U U Strained Bulk-like Semiconductor Lasers

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